Kirchhoff方程的相对常值特解及其Lyapunov稳定性

对于超细长弹性杆静力学的Kirchhoff方程，用动力学的概念和方法研究其常值特解 和稳定性问题.计算了Kirchhoff方程相对固定坐标系、截面主轴坐标系以及中心线Frenet 坐标系的常值特解，进行了Kirchhoff动力学比拟，用一次近似理论分别讨论了它们的Lyapu nov稳定性，导出了若干稳定性判据，并在参数平面上绘出了稳定域. 关键词： 超细长弹性杆 Kirchhoff方程 常值特解 Lyapunov稳定性     

e-A深度非弹性散射中胶子辐射振幅的新计算方法

在e-A深度非弹性散射过程中, 喷注穿过冷核介质时, 多重散射诱导胶子辐射会导致对碎裂函数的修正及喷注的能量损失.前期研究中关于计算e-A深度非弹性散射中胶子辐射振幅的两种方法: 螺旋振幅近似和微扰QCD严格计算都异常繁杂. 本文发展了一种新的方法, 可以方便计算出多重散射导致胶子辐射的振幅, 得到的碎裂函数的修正以及能量损失与严格计算的结果一致.     

Modeling of radiative heat transfer in an axisymmetric cylindrical enclosure with participating medium

Radiative heat transfer in an axisymmetric enclosure with absorbing, emitting, and scattering medium is studied here by using the different methods such as MDOM, FVM, and MFVM with emphasis on the treatment of angular derivative term, which appears in curvilinear coordinates due to angular redistribution. After final discretization equation for MFVM is introduced by using the step scheme and directional weights, the present approach is validated by applying it to three different benchmarking problems with absorbing, emitting, and scattering medium. All of the results presented here support its accuracy as well as moderate efficiency. Finally, the present approaches are applied to a truncated cone-shaped enclosure as a body-fitted geometry case.     

中物院远红外自由电子激光实验研究

中国工程物理研究院基于射频直线加速器技术的远红外自由电子激光(FIR-FEL)实验取得阶段性进展,于2005年3月24晚8时30分首次出光, 并多次重复. 中心波长115μm, 谱宽1%.介绍了实验系统的主要组成部分和主要实验结果.     

B(0,N)-graded Lie superalgebras coordinatized by quantum tori Dedicated to Professor Sheng GONG on the occasion of his 75th birthday

We use a fermionic extension of the bosonic module to obtain a class of B(0, A)graded Lie superalgebras with nontrivial central extensions.     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

介质极化的瞬时相位与振幅

求解电子运动的二阶微分方程，在旋转波近似下，介质在外场突然变化时产生的瞬态感应极化与外场同频，但相位总是落后，最大落后为π/2；振幅大小与初态有关，随时间按指数规律衰减，衰减快慢由介质的阻尼系数决定。